Modulation of Magnetic Interlayer Coupling in the Fe5-xGeTe2 with In-Plane Bias

量子物理学・ナノサイエンス第416回セミナー

概要

In this presentation, microscopic structures and magnetic properties of the Fe₅−xGeTe₂ single crystal, recently discovered as a promising van der Waals (vdW) ferromagnet, are introduced. Our study demonstrates a new way of the magnetization control of the vdW magnets via the electrical control of the interlayer coupling from ferromagnetic (FM)-to-antiferromagnetic (AFM). The current-induced phase transition results in drastically enhanced magnetoresistance from 5% to 170% with current in-plane geometry. This observation is fundamentally different from other conventional ways such as spin torque effects and gate voltage effects [1,2].

This study will provide essential information to understand the complex magnetic properties and the origin of the new vdW ferromagnet, Fe₅−xGeTe₂ for future topology‐based spin devices.

　　　 　　　　
• [1] T. T. Ly, et al., Direct Observation of Fe‐Ge Ordering in Fe₅−xGeTe₂ Crystals and Resultant Helimagnetism, Advanced Functional Materials 31 (17), 2009758 (2021)
• [2] K. Kim, et al., Giant Modulation of Magnetoresistance in a Van Der Waals Magnet by In‐Plane Current Injection, Advanced Materials 37 (10), 2414917 (2025)
　　

• 量子物理学・ナノサイエンス第416回セミナー

• 東京科学大学理学院・物理学系 ナノサイエンスを拓く量子物理学拠点　共催