Ultrathin films of ferromagnetic oxide reveal a hidden Hall effect mechanism

In a recent breakthrough, researchers from Japan discovered a unique Hall effect resulting from deflection of electrons due to “in-plane magnetization” of ferromagnetic oxide films (SrRuO3). Arising from the spontaneous coupling of spin-orbit magnetization within SrRuO3 films, the effect overturns the century-old assumption that only out-of-plane magnetization can trigger the Hall effect. The study offers a new way to manipulate electron transport with potential applications in advanced sensors, quantum materials, and spintronic technologies.

• Ultrathin films of ferromagnetic oxide reveal a hidden Hall effect mechanism