Electrical and Electronic Engineering News

Jaehyo Jang won the IEEE/JSAP IWJT 2025 Young Award

IWJT 2025, sponsored by JSAP and technically co-sponsored by IEEE and EDS, was held in Uji, Kyoto

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July 18, 2025

Mr. Jaehyo Jang (M2) of the Hitoshi Wakabayashi lab won the Young Award (under 35) at the 22nd International Workshop on Junction Technology (IWJT 2025), sponsored by the Japan Society of Applied Physics (JSAP) and technically co-sponsored by the IEEE and the Electron Device Society (EDS). The workshop was held from June 5 to June 6 at Kyoto University, Uji Campus. The title of presentation is "P-type doping of PVD-MoS₂ film with nitrogen annealing accelerated by hydrogen incorporation".

Mr. Jaehyo Jang (right) and Program Committee Chair, IWJT 2025

From awardee

As the semiconductor industry pushes the limits of device dimensions, the demand for continued scaling of field-effect transistors (FETs) intensifies. Among the most promising candidates for next-generation semiconductor materials are transition metal dichalcogenides (TMDCs), a class of two-dimensional materials known for their excelling electrostatics and physical characteristics. Thanks to these properties, TMDCs are anticipated to play a pivotal role in redefining the future of transistor technology. In my research, I focused on realizing p-type doping of molybdenum disulfide (MoS₂), one of the most widely studied TMDCs. Despite the technical challenges associated with doping the TMDCs, the p-type doping of MoS₂ through non-destructive method has been successfully demonstrated. Notably, it is expected that this research can contribute to the integration of TMDCs into commercial semiconductor process since the MoS₂ has been deposited by physical vapor deposition (PVD) method, a industry-friendly bottom-up deposition method. Looking ahead, the next step is to fabricate a high-performing TMDC FET that can potentially coexist, or even surpass the silicon technology.