Kentaro Matsuura won the Young Award
IWJT 2019 sponsored by JSAP and technical co-sponsored by IEEE, EDS
Mr. Kentaro Matsuura (right) and Dr. Satoshi Shibata, Program Committee Chair, IWJT 2019
Mr. Kentaro Matsuura in Hitoshi Wakabayashi Lab. won the Young Award in 19th International Workshop on Junction Technologies (IWJT) 2019, sponsored by the Japan Society of Applied Physics and technical co-sponsored by IEEE, Electron Devices Society (EDS).
- Awarded for oral presentation
- Conference:
- 19th International Workshop on Junction Technologies (IWJT) 2019
- Award name:
- Young Award
- Recipient:
- Kentaro Matsuura
- Title :
- Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration
- Date:
- June 7th, 2019