Electrical and Electronic Engineering News

Kentaro Matsuura won the Young Award

IWJT 2019 sponsored by JSAP and technical co-sponsored by IEEE, EDS

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June 24, 2019

Mr. Kentaro Matsuura and Dr. Satoshi Shibata, Program Committee Chair, IWJT 2019

Mr. Kentaro Matsuura (right) and Dr. Satoshi Shibata, Program Committee Chair, IWJT 2019

Plaque

Mr. Kentaro Matsuura in Hitoshi Wakabayashi Lab. won the Young Award in 19th International Workshop on Junction Technologies (IWJT) 2019, sponsored by the Japan Society of Applied Physics and technical co-sponsored by IEEE, Electron Devices Society (EDS).

  • Awarded for oral presentation
  • Conference:
    19th International Workshop on Junction Technologies (IWJT) 2019
    Award name:
    Young Award
    Recipient:
    Kentaro Matsuura
    Title :
    Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration
    Date:
    June 7th, 2019
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